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| LTE21009R NPN SILICON RF POWER TRANSISTOR DESCRIPTION: The ASI LTE21009R is Designed for Class A, Common Emitter Applications up to 2.5 GHz. FEATURES INCLUDE: * Gold Metalization * Emitter Ballasting PACKAGE STYLE .250 2L FLG Dim: A B C D E F H J K N Q U Inches Min 0.790 0.240 0.144 0.115 0.055 0.045 0.115 0.003 0.225 0.220 0.125 0.552 Max 0.810 0.260 0.170 0.125 0.065 0.055 0.135 0.006 0.275 0.240 0.135 0.572 Millimeters Min Max 20.07 20.57 6.10 6.60 3.66 4.31 2.93 3.17 1.40 1.65 1.15 1.39 2.93 3.42 0.08 0.15 5.72 6.98 5.59 6.09 3.18 3.42 14.03 14.52 MAXIMUM RATINGS IC VCBO PDISS TJ TST JC 250 mA 40 V 4.0 W @ TC 75 C -65 C to +200 C -65 C to +200 C 36 C/W 1 = BASE 2 = COLLECTOR 3 = EMITTER CHARACTERISTICS SYMBOL BVCBO BVCEO BVEBO ICBO hFE Cob GP POUT TC = 25 C TEST CONDITIONS IC = 1.0 mA IC = 10 mA IE = 1.0 mA VEB = 1.5V VCE = 5.0 V VCB = 28 V VCE = 16 V IC = 150 mA IC = 150 mA f = 1.0 MHz f = 2.1 GHz MINIMUM TYPICAL MAXIMUM 40 16 3.0 200 15 150 3.0 10 0.6 UNITS V V V mA --pF dB W A D V A N C E D S E M I C O N D U C T O R, I N C. 7525 ETHEL AVENUE * NORTH HOLLYWOOD, CA 91605 * (818) 982-1200 * FAX (818) 765-3004 Specifications are subject to change without notice. REV. A 1/1 |
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